STT-MRAM and Interfacial Spintronics
报告介绍 报告摘要: After more than 20 years’ development, spin-transfer-torque magnetic random access memory (STT-MRAM) has emerged as one of the most promising emerging main stream memory technology, due to its non-volatility, fast read and write time, small size, infinite endurance and compatibility with CMOS technology. There are still many remaining challenges for successful long-term commercialization...