2011年4月，我室杨金龙李震宇曾长淦等教授合作研究在ACS NANO上发表题为Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources的论文。

Source: ACS NANO Volume: 5 Issue: 4 Pages: 3385-3390 Published: APR 2011
Li ZC (Li, Zhancheng), Wu P (Wu, Ping), Wang CX (Wang, Chenxi), Fan XD (Fan, Xiaodong), Zhang WH (Zhang, Wenhua), Zhai XF (Zhai, Xiaofang), Zeng CG (Zeng, Changgan)1, Li ZY (Li, Zhenyu), Yang JL (Yang, Jinlong), Hou JG (Hou, Jianguo)
Addresses:
1. Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui Peoples R China
2. Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui Peoples R China
E-mail Addresses: cgzeng@ustc.edu.cn, zyli@ustc.edu.cn

Reprint Address: Zeng, CG (reprint author), Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui Peoples R China

Abstract: Graphene has attracted a lot of research Interest owing to its exotic properties-and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000 degrees C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400 degrees C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300 degrees C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a, way to an undemanding route for economical and convenient graphene growth.