2011年1月13日，我室王兵、曾长淦、张振宇、侯建国教授研究组合作在PHYSICAL REVIEW LETTERS上发表题为Atomic Structure, Energetics, and Dynamics of Topological Solitons in Indium Chains on Si(111) Surfaces的论文。

Source: PHYSICAL REVIEW LETTERS Volume: 106 Issue: 2 Article Number: 026801 Published: JAN 13 2011

Zhang H (Zhang, Hui)1,2, Choi JH (Choi, Jin-Ho)3, Xu Y (Xu, Yang)1,2, Wang XX (Wang, Xiuxia)1,2, Zhai XF (Zhai, Xiaofang)1,2, Wang B (Wang, Bing)1,2, Zeng CG (Zeng, Changgan)1,2,4, Cho JH (Cho, Jun-Hyung)3, Zhang ZY (Zhang, Zhenyu)4,5, Hou JG (Hou, J. G.)1,2,4
Addresses:
1. Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui Peoples R China
2. Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui Peoples R China
3. Hanyang Univ, Dept Phys, Seoul 133791, South Korea
4. Univ Sci & Technol China, ICQD, HFNL, Hefei 230026, Anhui Peoples R China
5. Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
E-mail Addresses: cgzeng@ustc.edu.cn, chojh@hanyang.ac.kr

Reprint Address: Zhang, H (reprint author), Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, 96 JinZhai Rd, Hefei 230026, Anhui Peoples R China

Abstract:
Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be similar to 60 meV, smaller than one-half of the band gap of similar to 200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics.