Abstract：

　　Scanning nonlinear dielectric microscopy (SNDM) was invented by the presenter in 1994 in Japan. Originally it was developed foiinvestigating ferroelectric and dielectric materials with rather smal nonlinear dielectric effects through the detection ofcapacitance variations caused by an applied voltape, .e. dC/d. Thus, since its early days, SNDM has featured a high sensitivity ttcapacitance variation,on the order ofSNDM can easiy measure nanoscale ferro ectric domains unger ampient conditions and even atomic-sca e cinole momentsunder ultrahigh vacuum conditions, Moreover, as an application of SNDM to next-generation ultrahigh-density memory devicesbeyond the magnetic hard disk drive (HDD) and semiconductor flash memory, an investigation of ultrahign-density feroelectritdata storage based on SNDM has been extensively investigatedAs SNDM has a high sensitivity to capacitance variation, it is also very effective at characterizing semiconductor materials anddevices. lt can easily distinguish the dopant type (PN) and has a wide dynamic range of sensitivity to both low and highconcentrations of dopants. lt is also applicable to the analysis of compound semiconductors for power device application withmuch ower signa levels than Si Extended versicns of SNDM have been deve oped. such as super-higher-order SNDMoca-geep-eve transient spectroscopy, noncontact SNDM NC-SNDM, scanning non inear cielectric potentiometry (SNDP anotime-resolved SNDM (Tr-SNDM). The favorable features of SNDM originate from its significant sensitivity.Thus, this seminar will meet the needs of those researchers in the industry, as well as academics and students, involved in theields of ferroelectrics, dielectrics, semiconductors and scanning probe microscopy.This seminar will help those intending to investigate the ferroelectric nano-domain structure, which cannot be resolved by monventional piezoresponse force microscopv PEM) and the atomic dipole moment, which cannot be distinguished by.onventiona. Kelvin probe force microscopy (KpE), to realize u trahigh-density ferroe ectric data storage with much'highermemory densities compared to flash memories and magnetic hard disk drives, to visualize the dopant distribution "n the fine.structure of state-of-the-ar mutua ized sem conductor deyices, to pertorm operand measurements of the carrier distrioution ot.to visua ize thedepletionlaver distribution of semiconductor devices that cannot be measured bworkingsemiconductor deviCasother methods to visualize the two-dimensiona trap interface state of density, Dit) distribution at the Mos interface. which hasnever been visualized by other technigues, and to measure rea-time ns range carrier movement in semiconductor materials anoevices?Moreover, as recently, microscopic carrier distribution of atomically-thin yan der Waals semiconductors has been successfully..measured by using above mentioned newly developed SNDM fami ies: these new topics are a so introduced in this seminar.v.This seminar about SNDM gives new insight into the material and device physics of feroelectrics, dielectrics, and semiconductors. which has proved hard to obtain by other methods.

Biosketch：

　　Yasuo Cho, is a professor at Tohoku University, Japan. He graduated in 1980 from Tohoku University in electrical engineeringdepartment. In 1985 he became a research associate at Research lnstitute of Electrical Communication, Tohoku University. lr1990 he received an associate professorship from Yamaguchi University, He then became an associate professor in 1997 and full professor in2001 at Research lnstitute of Electrical Communication, Tohoku University. During this time, his main researclinterests included nonlinear phenomena in ferroelectric materials and their applications, development on novel evaluationmethods of semiconductor materials and devices based on scanning nonlinear dielectric microscopy (SNDM), and research onusing the SNDM in next-generation ultrahigh-density ferroelectric data storage (SNDM ferroelectric probe memory)