赵 瑾


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姓  名:

赵 瑾

地  址:

中国科学技术大学理化大楼11005

邮  编:

230026

电  话:

0551-63602832

电  邮:

zhaojin@ustc.edu.cn

主  页:

staff.ustc.edu.cn/~zhaojin




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 教育与科研经历

1994-1998

中国科学技术大学物理系,学士学位

1998-2003

中国科学技术大学微尺度,博士学位

2004-2008

匹兹堡大学物理系,博士后

2008-2010

匹兹堡大学物理系,研究助理教授

2010-至今

中国科学技术大学物理系、微尺度,教授


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 目前研究方向

第一性原理计算激发态动力学研究


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 代表性论文

1.

S. Tan, A. Argondizzo, J. Ren, L. Liu, J. Zhao* and H. Petek*, “Plasmonic coupling at a metal/semiconductor interface.” Nature Photonics 11, 806-812 (2017)

2.

S. Tan, Y. Dai, S. Zhang, L. Liu, J. Zhao* and H. Petek*, “Coherent Electron Transfer at the Ag/Graphite Heterojunction Interface.” Phys. Rev. Lett., 120, 126801 (2018)

3.

W. Chu, W. A. Saidi, Q. Zheng*,Y. Xie, Z. Lan, O. V. Prezhdo, H. Petek and J. Zhao*, “Ultrafast Dynamics of Photongenerated Holes at a CH3OH/TiO2 Rutile Interface.” J. Am. Chem. Soc., 138, 13740 (2016)

4.

Q. Zheng, W. A. Saidi, Y. Xie, Z Lan, O. V. Prezhdo, H. Petek and J. Zhao*, “Phonon-assisted ultrafast charge transfer at van der Waals heterostructure interface.” Nano Lett. 17, 6435-6442 (2017)

5.

L. Zhang, Q. Zheng, Y. Xie, Z. Lan, O.V. Prezhdo, W. A. Saidi, and J. Zhao*, “Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors.” Nano Lett., 18, 1592-1599 (2018)

6.

J. Zhao*, M. Feng, D. B. Dougherty, H. Sun and H. Petek, “Molecular Electronic Level Alignment at Weakly Coupled Organic Film/Metal Interface”, ACS NANO, 8, 10988 (2014)

7.

D. Dougherty, M. Feng, H. Petek, J. T. Yates and J. Zhao*, “Band Formation in a Molecular Quantum Well via 2D Superatom Orbital Interactions”, Phys. Rev. Lett. 109, 266802 (2012)

8.

J. Ren, Y. Wang, J. Zhao*, S. Tan, and H. Petek*, “K atom promotion of O2 chemisorption on Au(111) surface.” J. Am. Chem. Soc., 141, 4438 (2019)


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