王德亮
 | Name: | Deliang Wang （D. Wang, 王德亮） |
Address: | University of Science and Technology of China, | |
| 230026 Hefei, P. R. China | ||
Tel: | 86-551-63600450 | |
Fax: | 86-551-63606266 | |
E-mail: | eedewang@ustc.edu.cn |
| EDUCATION AND RESEARCH EXPERIENCE |
1985-1989 | University of Science and Technology, Beijing. |
1989-1994 | Institute of Solid State Physics, Chinese Academy of Sciences; Postgraduate and Ph.D candidate. |
1994-1997 | Goettingen University; Germany. Ph.D. |
1999-2002 | Joint Research Center for Atom Technology, Japan; Research scientist. |
2003-2005 | Hong Kong University of Science and Technology; Research associate. |
2005-now | Professor, University of Science and Technology of China, 230026, Hefei, P. R. China. |
Honors | |
1994 | Volkswagen Foundation Fellowship, Germany. |
1999 | Fellowship of Joint Research Center for Atom Technology, Japan. |
2012 | Teaching award of Anhui Province, Second Prize, China. |
| RESEARCH INTERESTS |
1. | Semiconductor thin film growth and device fabrication; |
2. | High efficient semiconductor solar cells. |
| CURRENT RESEARCH PROJECTS |
1. | Research and fabrication of high efficient CdTe thin film solar cell. National Natural Science Foundation of China (NSFC, Grant No. 51272247). |
2. | Study on the coupling of nano plasmon with non-equilibrium processes in solar cells. National Natural Science Foundation of China (NSFC, Grant No. 61474103). |
| REPRESENTATIVE PUBLICATIONS |
1. | Stable CdTe solar cel lwith V2O5 as a back contact buffer layer K. Shen, R. Yang, D. Wang, M. Jeng, S. Chaudhary, K. Ho, D. Wang* Solar Energy Materials & Solar Cells, 144, 500–508 (2016). |
2. | CdTe solar cell performance under low-intensity light irradiance K. Shen, Q. Li, D. Wang, R. Yang, Y. Deng, M. Jeng, D. Wang* Solar Energy Materials & Solar Cells, 144, 472–480 (2016). |
3. | Stable CdTe thin film solar cells with a MoOx back contact buffer layer R. Yang, D. Wang, M. Jeng, K. Ho, D. Wang* Prog. Photovolt: Res. Appl. 24, 59-65 (2016). |
4. | CdTe solar cell performance under high-intensity light irradiance W. Li, R. Yang, D. Wang* Solar Energy Materials & Solar Cells, 123, 249–254 (2014). |
5. | Band alignment of ultra-thin hetero-structure ZnO/TiO2 junction K. Shen, K. Wu, D. Wang* Materials Research Bulletin, 51, 141-144 (2014). |
6. | Effect of surface protonation on device performance of dye-sensitized TiO2 solar cell K. Wu, K. Shen, Y. Yu, D. Wang* Solar Energy, 94, 195-201 (2013). |
7. | Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale Z. Bai, J. Yang, D. Wang* Appl. Phys. Lett., 99, 143502 (2011). |
8. | Dye-sensitized solar cells with modified TiO2 surface chemical states: the role of Ti3+ Y. Yang, K. Wu, D. Wang* Appl. Phys. Lett., 99, PP192014 (2011). |
9. | Mixed phases in p-type CuInSe2 thin films detected by using micro-Raman scattering spectroscopy D. Wang*, L. Wan, Z. Bai, Y. Cao Appl. Phys. Lett., 92, 211912 (2008). |
10. | Lattice vibration fundamentals of nanocrystalline anatase: a temperature-dependent study by using micro-Raman scattering spectroscopy D. Wang,* B. Chen, J. Zhao J. Appl. Phys. 101, 113501 (2007). |
11. | Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique Z. Yang, R. Wang, S. Jia, D. Wang, B. Zhang, K.M. Lau, K.J. Chen Appl. Phys. Lett., 88, 041913 (2006). |
12. | Comparison of blue and green InGaN/GaN multi-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy Y. Qi, H. Liang, D. Wang, Z. Lu, W. Tang, K.M. Lau Appl. Phys. Lett., 86, 101903 (2005). |
13. | Micro-Raman scattering study of stress distribution in GaN films grown on patterned Si(111) by metalorganic chemical vapor deposition D. Wang,* S. Jia, K. J. Chen, K. M. Lau, Y. Dikme, P. Van Gemmern, Y. C. Lin, H. Kalisch, R. H. Jansen, M. Heuken J. Appl. Phys., 97, 056103 (2005). |
14. | Si-doped cubic GaN grown on Si(001) substrate coated with a thin flat SiC buffer layer D. Wang,* S. Yoshida, and M. Ichikawa Appl. Phys. Lett. 80, 2472 (2002). |
15. | Growth of Hexagonal GaN on Si(111) Coated with a Thin Flat SiC Buffer Layer D. Wang,* Y. Hiroyama, M. Tamura, M. Ichikawa, and S. Yoshida Appl. Phys. Lett. 77, 1846(2000). |
16. | Heteroepitaxial Growth of Cubic GaN on Si(001) Coated with Thin Flat SiC by Plasma-Assisted Molecular Beam Epitaxy D. Wang,* Y. Hiroyama, M. Tamura, M. Ichikawa, and S. Yoshida Appl. Phys. Lett. 76, 1683 (2000). |
