王德亮


WDL.jpg Name: Deliang Wang (D. Wang, 王德亮)
 Born: April  1967, Shangdong, P. R. China
 Address:

Hefei National Lab for Physical Sciences at Microscale,

 University of Science and Technology of China, 230026 Hefei, P. R. China

 Tel:86-551-63600450
 Fax:86-551-63606266
 E-mail:eedewang@ustc.edu.cn




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 EDUCATION AND RESEARCH EXPERIENCE
  1985-1989University of Science and Technology, Beijing.
  1989-1994

Institute of Solid State Physics, Chinese Academy of Sciences; Postgraduate and Ph.D candidate.

  1994-1997Goettingen University; Germany. Ph.D.
  1999-2002Joint Research Center for Atom Technology, Japan; Research scientist.
  2003-2005Hong Kong University of Science and Technology; Research associate.
  2005-nowProfessor, Hefei National Lab for Physical Sciences at Microscale, University of Science and Technology of China, 230026, Hefei, P. R. China.
  Honors
  1994Volkswagen Foundation Fellowship, Germany.
  1999Fellowship of Joint Research Center for Atom Technology, Japan.
  2012Teaching award of Anhui Province, Second Prize, China.


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 RESEARCH INTERESTS
  1.Semiconductor thin film growth and device fabrication;
  2.High efficient semiconductor solar cells.


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 CURRENT RESEARCH PROJECTS
  1.Research and fabrication of high efficient CdTe thin film solar cell. National Natural Science Foundation of China (NSFC, Grant No. 51272247).
  2.Study on the coupling of nano plasmon with non-equilibrium processes in solar cells. National Natural Science Foundation of China (NSFC, Grant No. 61474103).


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 REPRESENTATIVE PUBLICATIONS
  1.Stable CdTe solar cel lwith V2O5 as a back contact buffer layer K. Shen, R. Yang, D. Wang, M. Jeng, S. Chaudhary, K. Ho, D. Wang* Solar Energy Materials & Solar Cells, 144, 500–508 (2016).
  2.CdTe solar cell performance under low-intensity light irradiance K. Shen, Q. Li, D. Wang, R. Yang, Y. Deng, M. Jeng, D. Wang* Solar Energy Materials & Solar Cells, 144, 472–480 (2016).
  3.Stable CdTe thin film solar cells with a MoOx back contact buffer layer R. Yang, D. Wang, M. Jeng, K. Ho, D. Wang* Prog. Photovolt: Res. Appl. 24, 59-65 (2016).
  4.CdTe solar cell performance under high-intensity light irradiance W. Li, R. Yang, D. Wang* Solar Energy Materials & Solar Cells, 123, 249–254 (2014).
  5.Band alignment of ultra-thin hetero-structure ZnO/TiO2 junction K. Shen, K. Wu, D. Wang* Materials Research Bulletin, 51, 141-144 (2014).
  6.Effect of surface protonation on device performance of dye-sensitized TiO2 solar cell K. Wu, K. Shen, Y. Yu, D. Wang* Solar Energy, 94, 195-201 (2013).
  7.Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale Z. Bai, J. Yang, D. Wang* Appl. Phys. Lett., 99, 143502 (2011).
  8.Dye-sensitized solar cells with modified TiO2 surface chemical states: the role of Ti3+ Y. Yang, K. Wu, D. Wang* Appl. Phys. Lett., 99, PP192014 (2011).
  9.Mixed phases in p-type CuInSe2 thin films detected by using micro-Raman scattering spectroscopy D. Wang*, L. Wan, Z. Bai, Y. Cao Appl. Phys. Lett., 92, 211912 (2008).
  10.Lattice vibration fundamentals of nanocrystalline anatase: a temperature-dependent study by using micro-Raman scattering spectroscopy D. Wang,* B. Chen, J. Zhao J. Appl. Phys. 101, 113501 (2007).
  11.Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique Z. Yang, R. Wang, S. Jia, D. Wang, B. Zhang, K.M. Lau, K.J. Chen Appl. Phys. Lett., 88, 041913 (2006).
  12.Comparison of blue and green InGaN/GaN multi-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy Y. Qi, H. Liang, D. Wang, Z. Lu, W. Tang, K.M. Lau Appl. Phys. Lett., 86, 101903 (2005).
  13.Micro-Raman scattering study of stress distribution in GaN films grown on patterned Si(111) by metalorganic chemical vapor deposition
D. Wang,* S. Jia, K. J. Chen, K. M. Lau, Y. Dikme, P. Van Gemmern, Y. C. Lin, H. Kalisch, R. H. Jansen, M. Heuken J. Appl. Phys., 97, 056103 (2005).
  14.Si-doped cubic GaN grown on Si(001) substrate coated with a thin flat SiC buffer layer D. Wang,* S. Yoshida, and M. Ichikawa Appl. Phys. Lett. 80, 2472 (2002).
  15.Growth of Hexagonal GaN on Si(111) Coated with a Thin Flat SiC Buffer Layer D. Wang,* Y. Hiroyama, M. Tamura, M. Ichikawa, and S. Yoshida Appl. Phys. Lett. 77, 1846(2000).
  16.

Heteroepitaxial Growth of Cubic GaN on Si(001) Coated with Thin Flat SiC by Plasma-Assisted Molecular Beam Epitaxy D. Wang,* Y. Hiroyama, M. Tamura, M. Ichikawa, and S. Yoshida Appl. Phys. Lett. 76, 1683 (2000).


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