报告摘要：

After more than 20 years’ development, spin-transfer-torque magnetic random access memory (STT-MRAM) has emerged as one of the most promising emerging main stream memory technology, due to its non-volatility, fast read and write time, small size, infinite endurance and compatibility with CMOS technology. There are still many remaining challenges for successful long-term commercialization as a disruptive memory technology. Its key element, the magnetic tunneling junction, has been reduced to 10nm in thickness and dominated by atomic layer engineered metal-oxide; 3d-5d-metal interfaces, in attempt to enhance tunneling magnetoresistance and to reduce the critical switching current while maintaining thermal stability. In this talk, we will review the recent progress of STT-MRAM and its underline interfacial magnetism with emphasis on our work on the interface effects on interlayer exchange coupling through ultrathin MgO, the electric field effect on ferromagnetic/antiferromagnetic coupling of synthetic antiferromagnetic layer and interfacial magnetic disorder modification of spin seebeck effect. Finally, the breakinglimitation of spin angular moment transfer (larger than ℏ transfer for single electron refection) at the interface of normal metal and magnetic insulator.

报告人简介：

　　闵泰，现任西安交通大学材料与工程学院教授。1985年本科毕业于中国科学技术大学晶体物理专业；美国明尼苏达大学电机系博士，师从朱健刚教授（Jimmy Zhu）研究磁存储技术。多次成功研发出国际领先新型磁存储产品：世界第一款自旋阀磁记录头产品， IBM外业界第一款AMR磁记录头产品；2002年组建、领导TDK（Headway） MRAM研发团队，发明了按摩尔定律Scaling的磁场驱动MRAM，首次发现STT翻转过程中的backhopping及bifurcation过程，完成平面式STT-MRAM工艺可行性研究，该研究成果是TDK转让为台积电STT-MRAM产品的核心；2013年为欧洲微电子研究中心（IMEC）STT-MRAM/Spintronics项目总监，成功开发了CoNi基垂直式STT-MRAM，首次在IMEC300毫米中试线上完成存储器Array芯片工艺，研究成果转让给Globalfoundries。拥有72项美国专利，其中多项专利为公司核心专利，奠定了公司磁记录产品的基础。