报告题目 | Engineering the Spin Orbit Interaction for Low Power Computing |
报告人 | Prof. ZHAO Weisheng (赵巍胜) |
报告人单位 | Fert Beijing Institute & School of Electronic and Information Engineering, Beihang University |
报告时间 | 2016-12-20 |
报告地点 | 合肥微尺度物质科学国家实验室九楼会议室(9004) |
主办单位 | 合肥微尺度物质科学国家实验室、国际功能材料量子设计中心(ICQD) |
报告介绍 | Abstract:
Low power is desirable for battery-powered electronics, such as mobile phone and internet of things (IOTs) devices etc. Spintronics is considered as an emerging technology that can offer this property based on its data non-volatility/fast operation/easy integration with CMOS. And spin transfer torque random access memory (STT-MRAM) has attracted much attention from academics and industries field. However, this technology has met some challenges in term of switching power, data stability and density etc. Spin orbit engineering may contribute of its improvement and this paper will give four examples: 1) heavy metal with strong spin orbit coupling for strong perpendicular magnetic anisotropy (PMA); 2) assistance of Spin-Hall Effect for fast Spin Transfer Torque; 3) Skyrmion racetrack memory with voltage control pinning; 4) all spin logic with weak spin orbit coupling channel. These could allow a full spin computing system with ultra-low power in the future.
Biosketch: |