报告题目 | Tunable negative magnetoresistance in hydrogenated graphene |
报告人 | Dr. CHEN Jianhao(陈剑豪) |
报告人单位 | Peking University |
报告时间 | 2016-06-22 |
报告地点 | 合肥微尺度物质科学国家实验室九楼会议室(9004) |
主办单位 | 合肥微尺度物质科学国家实验室、国际功能材料量子设计中心(ICQD) |
报告介绍 | Abstract:
The problem of unconventional magnetism in materials without d and f electrons has attracted continuous attention. In particular, a lot of efforts have been devoted to understand the origin and effects of magnetic moments induced in graphene with structure defects such as missing carbon atoms, absorption of light atoms such as hydrogen or fluorine. We have measured the magnetoresistance (MR) of graphene at low temperature with in-situ hydrogenation in ultra-high vacuum environment. Large negative MR was found in hydrogenated graphene which could be tuned by carrier density and sample temperature. Depending on the density of absorbed atomic hydrogen and carrier density, large linear negative MR was found which did not saturate up to 9 Tesla. Such negative MR could be the manifestation of local moments created by atomic hydrogen absorbed on graphene.
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