| 报告题目 | Scanning Tunneling Microscopy and Spectroscopy of Emerging 2D Semiconductor Heterojunctions |
| 报告人 | Dr. ZHANG Chendong |
| 报告人单位 | Department of Physics, University of Texas at Austin, USA |
| 报告时间 | 2016-02-25 |
| 报告地点 | 合肥微尺度物质科学国家实验室九楼会议室（9004） |
| 主办单位 | 合肥微尺度物质科学国家实验室、国际功能材料量子设计中心（ICQD） |
| 报告介绍 | Abstract:
Semiconductor heterojunctions are fundamental building blocks in many modern electronic and photonic devices. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. Many novel devices have been proposed based on heterojunctions (HJs) formed between dissimilar transition metal dichalcogenides (TMDs), including both vertically stacked van der Waals (vdW) and lateral in-plane HJs. By using scanning tunneling microscopy and spectroscopy, we investigate the atomic structures and electronic properties of multiple types of 2D heterostructures, i.e. vdW WSe2/MoS2 HJ, lateral bilayer-single layer MoSe2 HJ and in-plane coherently strained WSe2-MoS2 HJ.The direct measurements of band offsets, interface states, and the strain engineered quasiparticle band structures will significantly advance the development of 2D semiconductor heterostructures for novel atomic layer electronic/photonic devices.
Bioskech: Dr.Chendong Zhang obtained a B.S from Anhui University in 2001. He went to the Institute of Physics, Chinese Academy of Sciences for graduate studies, and received his Ph.D in condensed matter physics in 2011. He then joined Prof. Chih-Kang Shih’s group in the University of Texas at Austin as a postdoctoral scholar. His main research interests are molecular beam epitaxy and low temperature scanning tunneling microscopy investigations of surface physics and low dimensional materials. |
