报告摘要：

The continuous downsizing of modern electronic devices implies the increasing importance of quantum phenomena. As the feature sizes of transistors inch towards 10 nanometer, simulations including quantum effects and atomistic details are inevitable. A novel hybrid quantum mechanics and electromagnetics (QM/EM) method is developed to model individual electronic components at the nanoscale. QM and EM models are solved in different regions of the system in a self-consistent manner. The method is expected to bridge the gap between quantum mechanics calculation and circuit modeling. Applications of the method to junctionless field-effect transistors and photovoltaic device will be presented.