| 报告题目 | Effects of Charging and Doping on Nanostructures’ Stability, Growth, Strength and Superconductivity |
| 报告人 | Prof. LIU Feng |
| 报告人单位 | Department of Materials Science and Engineering, University of Utah, USA |
| 报告时间 | 2014-07-02 |
| 报告地点 | 合肥微尺度物质科学国家实验室九楼会议室 |
| 主办单位 | 合肥微尺度物质科学国家实验室、国际功能材料量子设计中心 |
| 报告介绍 | Abstract
Coulomb charging and electronic doping are ubiquitous effects, which may profoundly affect various properties of low-dimensional nanostructures. In this talk, I will first review the concept of Coulomb explosion [1] and Coulomb sink [2], as two unique manifestations of charging on the stability and growth of metal nanoclusters in gas phase and on surface, respectively. I will then discuss our recent studies of electronic doping effects on mechanical strength and electron-phonon interaction in graphene. I will show that doping of either electrons or holes will induce quantum electronic stress [3] in graphene and “electronically” enhance graphene mechanical strength [4], while doping of tensilely strained graphene may lead to superconductivity [5].
Rev. Lett. 59, 2562 (1987).
[1] F. Liu, et al., Phys.
[2] Y. Han et al., Phys. Rev. Lett. 93, 106102 (2004).
[3] H. Hu et al., Phys. Rev. Lett. 109, 055501 (2012).
[4] C. Si, W. Duan, Z. Liu, and F. Liu, Phys. Rev. Lett. 109, 226802 (2012)., 196802 (2013).
[5] C. Si, W. Duan, Z. Liu, and F. Liu, Phys. Rev. Lett. 111
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