| 报告题目 | Interface Engineering for Graphene and 2D Materials |
| 报告人 | Prof. Wei CHEN |
| 报告人单位 | National University of Singapore |
| 报告时间 | 2014-01-06 |
| 报告地点 | 合肥微尺度物质科学国家实验室九楼会议室 |
| 主办单位 | 合肥微尺度物质科学国家实验室、国际功能材料量子设计中心 |
| 报告介绍 | Abstract
In this talk, I will discuss our recent work of an atomic scale investigation of growth mechanism and direct observation of growth intermediates for CVD graphene on Cu(111) and Cu(110) under ultrahigh vacuum condition using methane as precursor, by in-situ low-temperature scanning tunneling microscopy (LT-STM), and corroborated by density-functional theory (DFT) calculations. I will also briefly summarize our recent work for interface engineered 2D materials (graphene and MoS2) based FETs and photo-transistors, through the combination of in-situ FET device evaluation and photoelectron spectroscopy investigation. We will particularly emphasize on the recent progress of doping effect on graphene lateral junction transistors and discuss their abnormal transport behaviors. |
