| 报告题目 | Localization and quantum spin Hall effect in Si-doped 2D topological insulators |
| 报告人 | Prof. Yi Zhou(周毅) |
| 报告人单位 | 浙江大学 |
| 报告时间 | 2013-11-26 |
| 报告地点 | 合肥微尺度物质科学国家实验室九楼会议室 |
| 主办单位 | 合肥微尺度物质科学国家实验室 |
| 报告介绍 | 报告摘要：
Quantum spin Hall effect or 2 dimensional topological insulator were predicted theoretically and confirmed by experiments. However, the quantization of electric conductance has not been observed in high precision as in the quantum Hall effect until very recent data on Si-doped InAs/GaSb quantum well by Rui-Rui Du’s group in Rice University. In this talk, I shall discuss the effect of localization to the conductance quantization. Our results are in good agreement with the experiment and a conductance dip structure due to backward scattering is proposed for the future experimental examination. |
