| 报告题目 | Spin injection in semiconductors |
| 报告人 | Dr. Yuam Lu |
| 报告人单位 | CNRS Institut Jean Lamour, Nancy, FRANCE |
| 报告时间 | 2013-05-20 |
| 报告地点 | 合肥微尺度物质科学国家实验室九楼会议室 |
| 主办单位 | 合肥微尺度物质科学国家实验室 |
| 报告介绍 | 报告摘要：
Efficient injection of spin-polarized electrons from a ferromagnetic (FM) source into a semiconducting heterostructure is a prerequisite for the realization of semiconductor spintronic devices. However, due to the large conductivity mismatch between FM metals and semiconductors, direct deposition of the FM metal on the semiconductor surface will result in very poor spin injection efficiency [1]. In this talk, I will introduce two methods to overcome this impedance obstacle to get high spin-injection efficiency. (1) By insertion of a thin MgO tunnel barrier between FM and GaAs, we have obtained 32% circular polarization for spin-injection in GaAs.[2] (2) By using hot electron injection and detection technique, we have obtained 50% spin injection in Si.[3,4] [1] A. Fert and H. Jaffr¨¨s, Phys. Rev. B 64, 184420 (2001). [2] Y. Lu, V. G. Truong, P. Renucci, M. Tran, H. Jaffr¨¨s, C. Deranlot, J.-M.George, A. Lema?tre, Y. Zheng, D. Demaille, P.-H. Binh, T. Amand, and X. Marie, Appl. Phys. Lett. 63, 054416 (2008). [3] Y. Lu and I. Appelbaum, Appl. Phys. Lett. 97, 162501 (2010). [4] Y. Lu, J. Li and I. Appelbaum, Phys. Rev. Lett. 106, 217202 (2011). |
