报告摘要：
Topological insulators (TIs) are a new kind of insulators with topologically band structures originated from strong spin-orbit coupling. They are predicted to have an insulating bulk state and gapless surface states (SSs). Three dimensional (3D) TIs such as Bi2Te3 and Bi2Se3 have been experimentally verified. The 3D TIs are also well known as excellent thermoelectric materials. The multilayer and superlattice growth of these compounds are valuable for the fundamental research and applications of advanced spintronics devices.
In this report, the optimal growth parameters of Bi2Te3/Bi2Se3 thin films and multilayers by molecular beam epitaxy (MBE) are described. The multilayer growth was in situ monitored by reflection high energy electron diffraction (RHEED). The interface quality of the multilayer was verified by atomic force microscopy (AFM). The structure was probed by x-ray diffraction and Raman scattering. The electronic property of the TI thin films and top surface of multilayers were probed by angle resolved photoemission (ARPES). The growth temperature and flux ratio effect on the band structure and electronic property will be reported.
Finally, the spintronics applicationin spin pumping effect and using the TI films will be discussed. The application of TI thin films and multilayers in thermoelectric and solar cell devices will also be presented.
报告人简介：
黄荣俊教授1985年于台湾大学物理系获学士学位；1992年于美国伊利诺伊大学厄本纳-香槟分校（UIUC）物理系获博士学位。1992年10月至今先后任台湾成功大学物理系副教授、教授、特聘教授以及成功大学理学院光电科学与工程研究所与工学院奈米科技暨系统工程研究所合聘教授。期间，先后兼任高雄大学应用物理系主任与理学院院长、成功大学研究发展处副研发长、台湾欧盟计划南部办公室主任、台湾物理学会理事长、台湾同步辐射中心监事、台湾磁性技术协会理事、台湾工业技术研究院审查委员、台湾国科会自然处审议委员、台湾南部科学工业园区咨询委员会委员、合肥工业大学客座教授。黄教授从事自旋电子学薄膜与纳米结构材料以及相关磁性与光电器件的研究工作超过20年，研究涉及磁性金属、稀磁半导体、自旋零禁带半导体、拓扑绝缘体、多铁性材料、有机光电材料与器件、磁性隧道结、自旋发光二极管、磁性随机存储器、磁性发光二极管等领域。近20年来承担台湾国科会各类研究项目近40项（其中包括3项台湾奈米国家型计划，类似于973计划），研究经费超过1亿元新台币，已发表学术论文130余篇，合著（译）专著3本，获得授权台湾发明专利2项。
