报告摘要：
　　It is well known that magnetic materials with high coercivity, perpendicular magnetic anisotropy and magnetic energy product have great application potential in ultrahigh-density perpendicular magnetic recording, permanent magnets and spintronics. On the other hand, magnetic materials epitaxied on semiconductors allow for a direct integration of magnetic, optical and electronic devices with high performances. For spin-dependent surface-light-emitting devices, their optical recombination is sensitive to the out-of-plane spin polarization, the heterostructure consisting of magnetic perpendicular magnet and semiconductor may exclude a burden to apply a large magnetic field of the order of 20 kOe to rotate the magnetization out of plane. Noble-metal-free perpendicular magnetic L10-MnGa homogeneous film was theoretically predicted to have perpendicular magnetic anisotropy of 26 Merg/cc, magnetization of 845 emu/cc, magnetic energy product of 28 MGOe, Gilbert damping constant of 0.0003 and spin polarization up to 71% at Fermi level. So far, however, only a few L10-MnGa films on semiconductors GaN and GaAs demonstrated perpendicular easy axis with small magnetization below 230 emu/cc and coercivity below 5 kOe. Also, no results about the detailed perpendicular anisotropy of these L10-MnGa films were presented. The quest for semiconductor-compatible L10-MnxGa films with the fascinating theory-predicted properties remains a major challenge.
　　In my talk, I will present our recent result on L10-MnGa single crystalline films grown on GaAs by molecular-beam epitaxy with pronounced magnetic properties at room temperature, including ultrahigh coercivity up to 42.8 kOe£¬giant perpendicular anisotropy of 21.7 Merg/cc and large energy products of 2.6 MGOe, respectively. Detailed studies will be also given on the tailoring of magnetism for different functional applications by controlling composition and post-growth annealing.