Abstract
As the semiconductor device continues scaling down, conventional Flash memory is facing more and more bottlenecks and will be very difficult to go through 16 nm node. According to the white paper of ITRS 2010, STT-MRAM and RRAM are thought as the most promising technologies among various emerging non-volatile memory concepts, and are worthy to put additional focuses on research and development to accelerate the progress toward commercialization. In this talk, a brief introduction on RRAM technology will be firstly given and its opportunities & challenges will be discussed. Then, research works of RRAM in IMECAS will be introduced, including switching mechanism study, doping effect on device performance, material characterization and metrology, radiation effect and 3D integration.

Bio-Sketch
Ming Liu received the B.S. & M.S. degrees in semiconductor physics and device from Hefei University of Technology in 1985 and 1988 respectively, and the Ph.D degree in Material Science from Beihang University in 1998. Her current research interests are Micro/nanofabrication, memory device and integration, nano-electronics and molecular electronics. Now Dr. Liu is the director of Laboratory of Nano-fabrication and Novel device Integrated Technology, IMECAS.
Dr. Liu holds more than 30 Chinese patents (more filed and pending), and has published 3 books (collaborate with others), more than 180 journal papers, and more than 50 papers (including 18 keynote or invited papers) in international and national conference. Dr. Liu was awarded Elitist Young Scientist from NSFC in 2008. She received National S&T Progress Award (second level in 2009) and National Invention Award (second level, in 2007 and 2005) as well as other Awards from Beijing Government and Ministry of Education.