报告人简介：
Dr. Zhuang is an experienced MBE specialist who has extensive expertise in the growth of III-V optoelectronic materials and nanostructures. He has established MBE research at Lancaster in 2003, since then he has been leading the MBE research activities. He is an internationally leading specialist in the MBE growth of arsenides, antimonides and dilute nitrides. He was the first to tune the normal incidence absorption from In(Ga)As/InAs quantum dots to the 8~12 µm spectral rangeand has successfully demonstrated efficient 1.3 m emission from GaInNAs/GaAs quantum wellsand InAs quantum dots.He has established a few pioneer works in mid-infrared optoelectronics including uncooled 4.2 µm InAsSbMQWs LEDs, InSb/InAs QDs and InAsSbN/InGaAs QWs on InP. He is currently developing hybrid GaInN nanowires on Si for next generation solar cells.