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Strong correlation induced charge localization in antiferromagnets

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报告题目   Strong correlation induced charge localization in antiferromagnets
报告人   Prof.Zheng Yuweng
报告人单位   Tsinghua University
报告时间   2013-03-18
报告地点   合肥微尺度物质科学国家实验室九楼会议室
主办单位   合肥微尺度物质科学国家实验室(筹)
报告介绍
报告摘要:
  The fate of an injected hole in a Mott antiferromagnet is an outstanding issue of strongly correlated physics. It provides important insights into doped Mott insulators closely related to high-temperature superconductivity in cuprates. Here, we report a systematic numerical study based on the density matrix renormalization group (DMRG). It reveals a remarkable novelty and surprise for the single hole's motion in otherwise well-understood Mott insulators. Specifically, we find that the charge of the hole is self-localized by a novel quantum interference mechanism purely of strong correlation origin, in contrast to Anderson localization due to disorders. The common belief of quasiparticle picture is invalidated by the charge localization concomitant with spin-charge separation: the spin of the doped hole is found to remain a mobile object. Our findings unveil a new paradigm for doped Mott insulators that emerges already in the simplest single hole case.

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