您当前的位置:首页 > 通知公告 > 学术报告

Quantum Spin Hall Effect and Topological insulators

来源:
报告题目   Quantum Spin Hall Effect and Topological insulators
报告人   Dr. Shoucheng Zhang
报告人单位   Professor of Physics, Applied Physics, and Electrical Engineering, Stanford University, USA
报告时间   2009-12-14
报告地点   合肥微尺度物质科学国家实验室一楼科技展厅
主办单位   合肥微尺度物质科学国家实验室
报告介绍

摘要:
Recently, a new class of topological states has been proposed and experimentally realized. These topological insulators have an insulating gap in the bulk, but have topologically protected edge or surface states due to the time reversal symmetry. In two dimensions the edge states give rise to the quantum spin Hall (QSH) effect, in the absence of any external magnetic field. I shall review the theoretical prediction of the QSH state in HgTe/CdTe semiconductor quantum wells, and its recent experimental observation. The edge states of the QSH state supports fractionally charged excitations. The QSH effect can be generalized to three dimensions as the topological magneto-electric effect (TME) of the topological insulators. Bi2Te3, Bi2Se3 and Sb2Te3 are theoretically predicted to be topological insulators with a single Dirac cone on the surface. I shall present a realistic experimental proposals to observe the magnetic monopoles on the surface of topological insulators.

相关文章