Abstract:

　　Two-dimensional electron gases (2DEGs) formed at the interface between two oxide insulators provide new opportunities for electronics. However, despite of intensive research, it remains a major challenge to increase the mobility of the 2DEG or to order the emerging properties on demand. Herein, I will present our studies on extreme mobility enhancement at LaMnO₃-buffered LaAlO₃/SrTiO3 (LAO/STO) interface [1] and the tunable ground states of diluted LAO/STO interface [2]. Moreover, I will present our recent results on the intrinsic band dispersion of the 2DEGs in these engineered LAO/STO heterostructures, where the LMO buffer layer is found to suppress not only the formation of oxygen vacancies but also the electron-phonon interaction on the STO side, making the buffered sample different from any other STO-based interfaces including the Mn-diluted LAO/STO system.

References

[1] Y. Z. Chen et al. Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping. Nature Mater. 14, 801 (2015)

[2] Y. L. Gan et al. Diluted Oxide Interfaces with Tunable Ground States, Adv. Mater. 31, 1805970 (2019).

报告人简介：

　　陈允忠， 中国科学院物理研究所磁学国家重点实验室研究员，博士生导师。于2009年中国科学院物理研究所获博士学位，2009-2021年在丹麦技术大学能源系以及丹麦瑞瑟可持续能源国家实验室工作，历任博士后，研究员和资深研究员等。2016年获丹麦王国技术科学大博士学位。2021年2月回国工作。主要研究方向为氧化物薄膜与异质结构的磁性及磁输运行为、氧化物界面二维导电及演生磁性以及稀土磁性材料等，围绕相关研究发表文章90余篇。